IGBT

文件：848.49 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

IGBT

文件：872.7 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 6A 40W DPAK

ONSEMI

安森美半导体

Using advanced NPT IGBT technology, Fairchild짰?셲 the NPT vIGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential.

文件：1.036569 Mbytes 页数：10 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：581.81 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

文件：660.97 Kbytes 页数：4 Pages

KERSEMI