首页 >FDPF5N50TMOS(场效应管)>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-ChannelMOSFET,FRFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DOMStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconvert | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET-D | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
600VN-ChannelMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
600VN-ChannelMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelPowerMOSFET-D | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelPowerMOSFET-D | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
500VN-ChannelMOSFET Features •4.5A,500V,RDS(on)=1.8Ω@VGS=10V •Lowgatecharge(typical13nC) •LowCrss(typical8.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | TGS Tiger Electronic Co.,Ltd | TGS | ||
500VN-ChannelMOSFET 500VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO252-3L,JEDECOPTIONAA,PACKINGCONFIGURATIONFigure1.0 | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
500VN-ChannelMOSFET Features •4.5A,500V,RDS(on)=1.8Ω@VGS=10V •Lowgatecharge(typical13nC) •LowCrss(typical8.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
17+ |
TO-220F |
31518 |
原装正品 可含税交易 |
询价 | ||
FAIRCHILD/仙童 |
2021+ |
TO-220F |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220F |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-220F |
20000 |
深圳原装现货正品有单价格可谈 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220F |
22000 |
好质量好价格好漂亮保上机90天 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220F |
165958 |
询价 | |||
FAIRCHILD/仙童 |
22+ |
TO-220F |
10000 |
原装现货,假一赔十 |
询价 | ||
FSC/ON |
23+ |
原包装原封□□ |
51180 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
询价 | ||
Fairchild/ON |
21+ |
TO2203 |
13880 |
公司只售原装,支持实单 |
询价 | ||
ON Semiconductor |
2022+ |
TO-220-3 全封装,成形引线 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
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