isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 171A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.9mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.96 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 168A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.18 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 164A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：332.04 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：045N10A；Package：TO-220；100 V N-Channel MOSFET

• Fast switching speed • Low gate charge, QG=54 nC (typical) • High performance channel technology can achieve very low RDS(on). • High power and high current handling capacity • Meet RoHS standards •VDS=100V •ID(at VGS=10V)=100A •RDS(ON) (at VGS=10V)

文件：1.73694 Mbytes 页数：7 Pages

UMW

友台半导体

N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7m?

Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 42V Automotive Load Control • Starter / Altern

文件：246.82 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench MOSFET 75V, 80A, 4.7m?

Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 42V Automotive Load Control • Starter / Altern

文件：606.43 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.7 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：355.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7m?

Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 42V Automotive Load Control • Starter / Altern

文件：246.82 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench짰 MOSFET 75V, 164A, 4.7m廓

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A • Fast switc

文件：521.809 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM

General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Description • RDS(on) = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A

文件：380.28 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体