isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.52Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：331.67 Kbytes 页数：2 Pages

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N-Channel MOSFET

FEATURES ·Drain Current -ID= 11.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.52Ω(Max)@VGS= 10V APPLICATIONS ·Motor Drive ·DC-DC converter ·Power Switch And Solenoid Drive

文件：588.98 Kbytes 页数：5 Pages

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无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =12A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.19 Kbytes 页数：2 Pages

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N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanc

文件：376.64 Kbytes 页数：10 Pages

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N-Channel PowerTrench MOSFET 60V, 62A, 13.5mohm

N-Channel PowerTrench® MOSFET 60V, 62A, 13.5mΩ Features •rDS(ON)= 11.5mΩ(Typ.), VGS = 10V, ID= 62A •Qg(tot) = 22nC (Typ.), VGS = 10V • Low Miller Charge •Low QRRBody Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Mot

文件：300.08 Kbytes 页数：11 Pages

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仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =62A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.59 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =13A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.37Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.79 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =12A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.54Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.34 Kbytes 页数：2 Pages

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N-Channel MOSFET 500V, 12A, 0.54廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：621.07 Kbytes 页数：9 Pages

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N-Channel PowerTrench MOSFET 60V, 60A, 14.6m?

Features • rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 60A • Qg(tot) = 24nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management •

文件：250.03 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体