N-Channel PowerTrench짰 MOSFET 100V, 144A, 5.5m廓

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A •

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =130A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =105A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.3 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.42 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =96A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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N-Channel PowerTrench짰 MOSFET

Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switch

文件：454.59 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

• FEATURES • With TO-220 packaging • Low switching loss • Ultra low gate charge • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications • AC-DC converters • LED lighting • Unin

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =75A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：354.18 Kbytes 页数：3 Pages

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N-Channel PowerTrench MOSFET 60V, 75A, 10.5m?

Features • rDS(ON) = 9.5mΩ (Typ.), VGS = 10V, ID = 75A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management

文件：265.22 Kbytes 页数：11 Pages

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仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.31 Kbytes 页数：2 Pages

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N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avala

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