N-Channel MOSFET 200V, 18A, 0.14廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

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FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

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FAIRCHILD

仙童半导体

丝印：FDP18N50；Package：TO-220；N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ

Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for

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ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =18A@ TC=25℃ ·Drain Source Voltage : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.265Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

500V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

文件：1.033079 Mbytes 页数：10 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

compact I/O station for PROFIBUS-DP 16 Universal Digital Channels

■ PROFIBUS-DP slave ■ 9-pin SUB-D socket for PROFIBUS field connection ■ Rotary coding switch for setting the PROFIBUS address ■ 3 I/O power supply groups each galvanically separated ■ 16 universal digital channels, DI/DO ■ 24 VDC, PNP ■ Output current: 0.5 A ■ Protection class IP20

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TURCKTurck, Inc.

图尔克德国图尔克集团公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =45A@ TC=25℃ ·Drain Source Voltage : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.02Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：332.06 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =45A@ TC=25℃ ·Drain Source Voltage : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.02Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：331.91 Kbytes 页数：2 Pages

ISC

无锡固电