isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =40A@ TC=25℃ ·Drain Source Voltage : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =19mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：332.86 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =24A@ TC=25℃ ·Drain Source Voltage : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.175Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：331.86 Kbytes 页数：2 Pages

ISC

无锡固电

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

丝印：FDP2532；Package：TO-220；N-Channel PowerTrench® MOSFET 150 V, 79 A, 16 mΩ

Features • RDS(on) = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A • QG(tot) = 82 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Consumer Appliances • Synchronous Rectification • Battery Protection Circuit •

文件：1.13829 Mbytes 页数：15 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET 150V, 79A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 86nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82884 Applications • DC/DC conve

文件：275.65 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench MOSFET 150V, 37A, 36m?

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A • Qg(tot) = 39nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC Converters and Off-line UPS • Distributed

文件：256.69 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

150V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster sw

文件：81.69 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =22A@ TC=25℃ ·Drain Source Voltage : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =80mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.34 Kbytes 页数：2 Pages

ISC

无锡固电

STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY

GENERALDESCRIPTION The TK2150 (TC2001/TP2150 chipset) is a two-channel, 200W(6Ω) per channel Amplifier Driver that uses Tripath’s proprietary Digital Power Processing (DPP™ )technology. Class-T amplifiers offer both the audio fidelity of Class-AB and the power efficiency of Class-D amplifiers. F

文件：666.21 Kbytes 页数：34 Pages

TRIPATH

N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

文件：269.7 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体