isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 51A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.08 Kbytes 页数：2 Pages

ISC

无锡固电

200V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e

文件：739.7 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

N‐Channel UniFET MOSFET

Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for sw

文件：408.33 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 49mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.83 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS=55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：331.99 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：331.77 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：333.14 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.011 Ω

文件：422.33 Kbytes 页数：10 Pages

FAIRCHILD

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60V N-Channel PowerTrench??MOSFET

60V N-Channel PowerTrench™ MOSFET

文件：440.93 Kbytes 页数：16 Pages

FAIRCHILD

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