200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lowe

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FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =19A@ TC=25℃ ·Drain Source Voltage : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =130mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

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N-Channel MOSFET 400V, 26A, 0.16廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

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FAIRCHILD

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丝印：FDP2710；Package：TO220；Channel PowerTrench® MOSFET 250V, 50A, 47mΩ

General Description This N-Channel MOSFET is produced using ON Semi-conductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features -Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A -Typ Qg(TOT)

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ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =100A@ TC=25℃ ·Drain Source Voltage : VDSS=55V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：331.46 Kbytes 页数：2 Pages

ISC

无锡固电

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

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N-Channel PowerTrench MOSFET

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distribute

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FAIRCHILD

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N-Channel PowerTrench MOSFET 100V, 80A, 9m?

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distribute

文件：267.76 Kbytes 页数：11 Pages

FAIRCHILD

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N-Channel PowerTrench MOSFET 100V, 80A, 15mOHM

Features •rDS(on)=13 mΩ(Typ.), VGS= 10V, ID= 40A •Qg(TOT)=49 nc(Typ.), VGS= 10 V • Low Miller Charge • Low Q rr Body Diode • UIS Capability (Single Pulse/Repetitive Pulse) Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs •

文件：388.31 Kbytes 页数：6 Pages

FAIRCHILD

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