N-Channel PowerTrench MOSFET 100V, 80A, 15mOHM

Features •rDS(on)=13 mΩ(Typ.), VGS= 10V, ID= 40A •Qg(TOT)=49 nc(Typ.), VGS= 10 V • Low Miller Charge • Low Q rr Body Diode • UIS Capability (Single Pulse/Repetitive Pulse) Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs •

文件：388.31 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：327.82 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道 PowerTrench® MOSFET 100V，80A，18mΩ

N-Channel PowerTrench® MOSFET 100 V, 80 A, 18 mΩ •RDS(on) = 15mΩ （典型值） @ VGS = 10V, ID = 80A\n•高性能沟道技术可实现极低的 RDS(on)\n•低米勒电荷\n•UIS能力（单脉冲/重复脉冲）;

ONSEMI

安森美半导体

T-13/4 (5 mm), T-1 (3 mm), 5 Volt, 12 Volt, Integrated Resistor LED Lamps

Description The 5 volt and 12 volt series lamps contain an integral current limiting resistor in series with the LED. This allows the lamp to be driven from a 5 volt/12 volt source without an external current limiter. The red LEDs are made from GaAsP on a GaAs substrate. The High Efficiency Red a

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HP

安捷伦

VERTICAL DEFLECTION CIRCUIT

文件：349.48 Kbytes 页数：8 Pages

PHI

PHI

VERTICAL DEFLECTION CIRCUIT

文件：349.48 Kbytes 页数：8 Pages

PHI

PHI