200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lowe

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =19A@ TC=25℃ ·Drain Source Voltage : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =130mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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200V N-Channel PowerTrench® MOSFET

General Description\nThis N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit.\nThese MOSFETs feature faster switching and lower • 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V\n• Low gate charge (27 nC typical)\n• Fast switching speed\n• High performance trench technology for extremely low RDS(ON)\n• High power and current handling capability;

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200V N-Channel PowerTrench MOSFET

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Power Converter Topology and MOSFET Selection for 48-V Telecom

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200V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 3.0 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V • Low gate charge • Fast switching speed •

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