60V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：598.45 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=65A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：332.41 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，UniFETTM，60 V，65 A，16 mΩ，TO-220

这些N沟道增强模式功率场效应晶体管采用飞兆专有的平面条形DMOS技术生产而成。 这一先进技术是专为最大限度地降低通态电阻、提供卓越开关性能以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件非常适合高效开关电源、有源功率因数校正以及基于半桥拓扑的电子灯镇流器。 • RDS(on) = 13mΩ (Max.)@ VGS = 10V, ID = 32.5A\n• Low gate charge (Typ. 33nC)\n• Low Crss (Typ. 35pF)\n• Fast Switching Speed\n• Improved dv/dt Capability;

ONSEMI

安森美半导体

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：652.83 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=72A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conver

文件：362.79 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Channel MOSFET

文件：653.74 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体