30V N-Channel PowerTrench SyncFET

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6690S includes an integrated Schottky di

文件：88.46 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =15.5m Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：333.03 Kbytes 页数：2 Pages

ISC

无锡固电

Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with compar

文件：203.64 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

30V N-Channel PowerTrench SyncFET?

General Description The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode

文件：262.86 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

ROM Interface IC

GENERAL DESCRIPTION The MSM6690 can drive three devices of 131,072 x 8-bit EPROM or Mask ROM. The MSM6690 contains a built-in internal address generator circuit and one external clock input that enables contiued serial read operations. The internal address counter is automatically incremented by

文件：182.72 Kbytes 页数：8 Pages

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社