首页 >FDPF14N30T>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FDPF14N30T | N-Channel UniFET MOSFET 300 V, 14 A, 290 m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
300VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
300VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
300VN-ChannelMOSFET 300VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300VN-ChannelMOSFET 300VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
300VN-ChannelMOSFET Features •14.4A,300V,RDS(on)=0.29Ω@VGS=10V •Lowgatecharge(typical30nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •RoHSCompliant | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300VN-CHANNELMOSFET Features •14.4A,300V,RDS(on)=0.29Ω@VGS=10V •Lowgatecharge(typical30nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •RoHSCompliant | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300VN-ChannelMOSFET Features •14.4A,300V,RDS(on)=0.29Ω@VGS=10V •Lowgatecharge(typical30nC) •LowCrss(typical23pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •RoHSCompliant | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300VN-ChannelMOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14.4A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.29Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8.5A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.29Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
300VN-ChannelMOSFET
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
300VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
详细参数
- 型号：
FDPF14N30T
- 功能描述：
MSOFET N-CH 300V 14A TO-220F
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
UniFET™
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
13150 |
正品授权货源可靠 |
询价 | |||
FSC/ON |
23+ |
原包装原封 □□ |
1000 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
询价 | ||
F |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
Fairchild/ON |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Fairchild/ON |
21+ |
TO2203 |
13880 |
公司只售原装,支持实单 |
询价 | ||
Fairchild/ON |
2022+ |
TO2203 |
6680 |
原厂原装，欢迎咨询 |
询价 | ||
ON Semiconductor |
2022+ |
TO-220-3 整包 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
FAIRCHILD |
23+ |
TO-220-3 |
24057 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
Fairchild |
23+ |
33500 |
询价 | ||||
ON-安森美 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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