N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

文件：112.6 Kbytes 页数：5 Pages

Fairchild

仙童半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：471.43 Kbytes 页数：4 Pages

Fairchild

仙童半导体

N-Channel Logic Level PowerTrenchTM MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

文件：112.6 Kbytes 页数：5 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9 mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：333.4 Kbytes 页数：2 Pages

ISC

无锡固电

30V N-Channel PowerTrench짰SyncFET?

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottk

文件：82.84 Kbytes 页数：6 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7 mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：332.5 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：471.43 Kbytes 页数：4 Pages

Fairchild

仙童半导体

N 沟道逻辑电平 PowerTrench® MOSFET 30V，60A，9mΩ

此N沟道逻辑电平MOSFET已经过专门设计，采用同步或常规的开关PWM控制器提高DC/DC转换器的整体效率。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。 因此，这是一款更易于驱动且更安全（在高频段也是如此）的MOSFET，可实现具有更高总效率的DC/DC电源设计。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •60 A，30 V\n•RDS(ON) = 9 mΩ @ VGS = 10 V\n•RDS(ON) = 12 mΩ @ VGS = 4.5 V\n•在高温下指定的临界DC电气参数\n•高性能沟道技术可实现极低的rDS(on)\n•175°C最大结温额定值;

ONSEMI

安森美半导体

MOSFET N-CH 30V 80A TO-220

ONSEMI

安森美半导体