N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ■ rDS(ON)

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：327.63 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道 PowerTrench® MOSFET 30V，54A，11.6mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •RDS(ON) = 14.5mΩ，VGS = 4.5V，ID = 40A\n•RDS(ON) = 11.6mΩ，VGS = 10V，ID = 40A\n•高性能沟道技术可实现极低的RDS(on)\n•低栅极电荷\n•高功率和高电流处理能力\n• RoHS Compliant;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET

文件：767.83 Kbytes 页数：11 Pages

Fairchild

仙童半导体