N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：414.53 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：332.38 Kbytes 页数：2 Pages

ISC

无锡固电

6.0 Amp MINIATURE PLASTIC SILICON RECTIFIERS LOW COST LOW LEAKAGE

文件：198.82 Kbytes 页数：2 Pages

FCI

富加宜

Selection Guide

SANKEN IGBT FGT313, FGT312, FGT412, FGT612, FGM622S, FGM603, FGM623S, MGD623N, MGD623S

文件：175.58 Kbytes 页数：4 Pages

SANKEN

三垦

6.0A FAST RECOVERY RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability

文件：51.85 Kbytes 页数：3 Pages

WTE

Won-Top Electronics