30V N-Channel PowerTrench SyncFET

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670AS includes an integrated Schottky d

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 62A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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无锡固电

30V N-Channel PowerTrench짰 SyncFET?

文件：789.57 Kbytes 页数：7 Pages

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仙童半导体

30V N-Channel PowerTrench SyncFET

General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670AS includes an integrated Schottky d

文件：100.18 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

30V N-Channel PowerTrench짰 SyncFET?

文件：789.57 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体