isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.15Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：331.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET, FRFET 500V, 6A, 1.15OHM

文件：549.31 Kbytes 页数：9 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

文件：958.82 Kbytes 页数：10 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.95 Kbytes 页数：2 Pages

ISC

无锡固电

500V N-Channel MOSFET

文件：458.93 Kbytes 页数：10 Pages

Fairchild

仙童半导体