500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.25 Kbytes 页数：2 Pages

ISC

无锡固电

500V N-Channel MOSFET

文件：447.41 Kbytes 页数：10 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，UniFETTM，500V，16A，380mΩ，TO-220F

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 380mΩ （最大值）@ VGS = 10V, ID = 8.3A\n•低栅极电荷（典型值 32nC)\n•低 Crss（典型值 20pF)\n•100% 经过雪崩击穿测试;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel UniFETTM MOSFET 500 V, 16 A, 380 m廓

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

文件：1.36447 Mbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.48Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.41 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel UniFETTM Ultra FRFET MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has

文件：826.26 Kbytes 页数：9 Pages

Fairchild

仙童半导体

R DS(on) = 370 m廓 ( Typ.) @ VGS = 10 V, ID = 7.5 A

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has

文件：826.26 Kbytes 页数：9 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

文件：800.95 Kbytes 页数：10 Pages

Fairchild

仙童半导体