N-Channel UniFETTM Ultra FRFET MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has

文件：826.26 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

R DS(on) = 370 m廓 ( Typ.) @ VGS = 10 V, ID = 7.5 A

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has

文件：826.26 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.48Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：323.41 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM，500 V，15 A，480 mΩ，TO-220F

UniFETTMMOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。UniFET Ultra FRFETTM MOSFET 具有非常卓越的体二极管反向恢复性能。其 trr小于 50 nsec 且反向 dv/dt 抗扰度为 20 V/nsec，而一般的平面 MOSFET 产品分别为 200 nsec 以上和 4.5 V/nsec。因此，UniFET Ultra FRFET MOSFET 在要求 MOSFET 体二极管性能改进的某些应用中可消除多余的元件，并提高系统的可靠性 •RDS(on) = 370mΩ （典型值）@ VGS = 10V, ID = 7.5A栅极电荷低（典型值：32nC)\n•低 Crss（典型值20pF)\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能\n•符合 RoHS 标准\n•RoHS compliant;

ONSEMI

安森美半导体