N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanc

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

功率 MOSFET，N 沟道，UniFETTM II，600 V，12 A，650 mΩ，TO-220F

UniFETTM II MOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。该先进MOSFET系列产品在平面 MOSFET 产品中具有最小的通态电阻，还可提供卓越的开关性能和更高的雪崩能量强度。此外，内部的栅源 ESD 二极管使 UniFET II MOSFET 产品可承受超过 2kV 的 HBM 冲击应力。该器件系列适用于开关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 530mΩ （典型值）@ VGS = 10V, ID = 6A栅极电荷低（典型值：26nC)\n•低 Crss（典型值12pF)\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能\n•改进了 ESD 防护能力\n•符合 RoHS 标准\n•RoHS compliant;

ONSEMI

安森美半导体

Advanced N-Ch Power MOSFET-G

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FOSTER

福斯特半导体

Bi-Directional Triode Thyristor Planar Silicon

Application Explanation • Switching mode power supply, light dimmer, electric flasher unit, hair drier • TV sets, stereo, refrigerator, washing machine • Electric blanket, solenoid driver, small motor control • Photo copier, electric tool

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Fairchild

仙童半导体

N-CHANNEL SILICON POWER MOSFET

文件：589.27 Kbytes 页数：5 Pages

Fuji

富士通