These N-Channel enhancement mode power field effect transistors are produced using Fairchild?셲 proprietary, planar stripe, DMOS technology.

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avala

文件：439.87 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avala

文件：494.97 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel 65 0V (D-S)Power MOSFET

文件：1.10788 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

功率 MOSFET，N 沟道，UniFETTM II，600 V，10 A，750 mΩ，TO-220F

UniFETTM II MOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。该先进MOSFET系列产品在平面 MOSFET 产品中具有最小的通态电阻，还可提供卓越的开关性能和更高的雪崩能量强度。此外，内部的栅源 ESD 二极管使 UniFET II MOSFET 产品可承受超过 2kV 的 HBM 冲击应力。该器件系列适用于开关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 640mΩ （典型值）@ VGS = 10V, ID = 5A栅极电荷低（典型值：23nC)\n•低 Crss（典型值10pF)\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能\n•改进了 ESD 防护能力\n•符合 RoHS 标准\n•RoHS compliant;

ONSEMI

安森美半导体