N-Channel PowerTrench MOSFET 100V, 61A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A • Qg(tot) = 41nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC Converters and Off-line UPS • Distributed Power Architectures

文件：272.25 Kbytes 页数：11 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 61A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench MOSFET 105V, 41A, 33m?

Features • rDS(ON) = 25mΩ (Typ.), VGS = 10V, ID = 41A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off

文件：237.32 Kbytes 页数：10 Pages

FAIRCHILD

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STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY

GENERALDESCRIPTION The TK2150 (TC2001/TP2150 chipset) is a two-channel, 200W(6Ω) per channel Amplifier Driver that uses Tripath’s proprietary Digital Power Processing (DPP™ )technology. Class-T amplifiers offer both the audio fidelity of Class-AB and the power efficiency of Class-D amplifiers. F

文件：666.21 Kbytes 页数：34 Pages

TRIPATH

N-Channel PowerTrench MOSFET 100V, 32A, 36m?

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectur

文件：278.66 Kbytes 页数：11 Pages

FAIRCHILD

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200V N-Channel MOSFET

Description UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

文件：908.49 Kbytes 页数：8 Pages

FAIRCHILD

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

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P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC

文件：213.32 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -16A@ TC=25℃ ·Drain Source Voltage- : VDSS= -20V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.08Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：326.34 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC

文件：213.32 Kbytes 页数：7 Pages

FAIRCHILD

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