N-Channel PowerTrench MOSFET 105V, 41A, 33m?

Features • rDS(ON) = 25mΩ (Typ.), VGS = 10V, ID = 41A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 41A@ TC=25℃ · Drain Source Voltage -VDSS= 105V(Min) · Static Drain-Source On-Resistance -RDS(on) = 33mΩ(Max)@VGS= 10V APPILICATIONS · Battery Protection Circuit · Consumer Appliances · Synchronous Rectification

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：327.77 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道，PowerTrench® MOSFET，105V，41A，33mΩ

N-Channel PowerTrench® MOSFET 105 V, 41 A, 33 mΩ •RDS(on) = 25mΩ （典型值） @ VGS = 10V, ID = 41A\n•Qg(tot) = 28nC（典型值） @ VGS = 10V\n•低米勒电荷\n•低 Qrr 体二极管\n•优化高频率时的效率\n•UIS 能力（单脉冲和重复脉冲）;

ONSEMI

安森美半导体