Axial Vitreous Leaded Wirewound Resistors with CECC Approval

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VishayVishay Siliconix

威世

丝印：FDP18N50；Package：TO-220；N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ

Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for

文件：1.66296 Mbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：FDP2710；Package：TO220；Channel PowerTrench® MOSFET 250V, 50A, 47mΩ

General Description This N-Channel MOSFET is produced using ON Semi-conductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features -Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A -Typ Qg(TOT)

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ONSEMI

安森美半导体

丝印：FDP8442；Package：TO-220AB；N-Channel PowerTrench® MOSFET 40V, 80A, 3.1mΩ

Features - Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A - Typ Qg(10) = 181nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 - RoHS Compliant Applications - Automotive Engine Control - Powertrain Managemen

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ONSEMI

安森美半导体

丝印：FDP8443；Package：TO-220AB；N-Channel PowerTrench® MOSFET 40V, 80A, 3.5mΩ

Features - Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A - Typ Qg(10) = 142nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 - RoHS Compliant Applications - Automotive Engine Control - Powertrain Managemen

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ONSEMI

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丝印：FDP8N50NZ；Package：TO-220；N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m

Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100 Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Uninterruptible Power Supply • Lighting • AC-DC Power

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Fairchild

仙童半导体

丝印：FDPC5018SG；Package：PowerClip56；PowerTrench® Power Clip 30V Asymmetric Dual N-Channel MOSFET

Features Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens Rise/Fall Times, Resulting i

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Fairchild

仙童半导体

丝印：FDPC5030SG；Package：PQFN8；MOSFET - Dual N-Channel, Asymmetric, POWERTRENCH Power Clip 30 V

General Description This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide o

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ONSEMI

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丝印：FDPF035N06B；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 88 A, 3.5 m

Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 2.91 m (Typ.)@ VGS = 10 V, ID = 88 A • Low FOM RDS(on)*QG

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ONSEMI

安森美半导体

丝印：FDPF041N06BL1；Package：TO-220F；MOSFET – N-Channel, POWERTRENCH 60 V, 77 A, 4.1 m

Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 3.5 m (Typ.)@ VGS = 10 V, ID = 77 A • Low FOM RDS(on)*QG

文件：388.87 Kbytes 页数：11 Pages

ONSEMI

安森美半导体