N-Channel PowerTrench MOSFET 60V, 80A, 3.8m?

Features • rDS(ON) = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.8mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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N-Channel PowerTrench짰 MOSFET 60V, 80A, 3.8m?

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N 沟道，Power Trench® MOSFET，60V，80A，3.8mΩ

N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.8 mΩ •RDS(on) = 3.5mΩ （典型值） @ VGS = 10V, ID = 80A\n•QG(tot) = 96nC（典型值） @ VGS = 10V\n•低米勒电荷\n•低 Qrr 体二极管\n•UIS 能力（单脉冲和重复脉冲）;

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N-Channel PowerTrench짰 MOSFET 60V, 80A, 3.8m?

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N-Channel PowerTrench짰 MOSFET 60V, 80A, 3.8m廓

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