isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=313A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：331.95 Kbytes 页数：2 Pages

ISC

无锡固电

New Products, Tips and Tools for Power and Mobile Applications

文件：3.23672 Mbytes 页数：12 Pages

FAIRCHILD

仙童半导体

N 沟道 PowerTrench® MOSFET 60V，313A，2mΩ

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •RDS(on) = 1.65mΩ （典型值）@ VGS = 10V, ID = 100A\n•低FOM RDS(on) *QG\n•低反向恢复电荷，Qrr = 194nC\n•反向恢复软体二极管\n•使能高效同步整流\n•快速开关速度\n•100% 经过 UIL 测试\n•符合 RoHS 标准;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤2.0mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

文件：337.77 Kbytes 页数：2 Pages

ISC

无锡固电

New OptiMOS??40V and 60V

文件：1.02174 Mbytes 页数：2 Pages

INFINEON

英飞凌

OptiMOSTM Power-Transistor

Features • Optimized for high performance SMPS, e.g. sync. rec. • 100 avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：624.37 Kbytes 页数：9 Pages

INFINEON

英飞凌