150V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster sw

文件：81.69 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =22A@ TC=25℃ ·Drain Source Voltage : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =80mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.34 Kbytes 页数：2 Pages

ISC

无锡固电

150V N-Channel Power®Trench MOSFET

General Description\nThis N-Channel MOSFET has been designed\nspecifically for switching on the primary side in the\nisolated DC/DC converter application. Any application\nrequiring a 150V MOSFETs with low on-resistance and\nfast switching will benefit.\nThese MOSFETs feature faster switching and lo • 22 A, 150 V. Rds(on)= 80 mΩ@ Vgs= 10V\nRds(on)= 90 mΩ@ Vgs= 6V\n• Low gate charge (40nC typical)\n• Fast switching speed\n• High performance trench technology for extremely low Rds(on)\n• 175°C maximum junction temperature rating;

ONSEMI

安森美半导体

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current Capacity

文件：22.95 Kbytes 页数：2 Pages

NTE

Low Power Pulse Width Modulator

文件：340.63 Kbytes 页数：9 Pages

TI

德州仪器

Low Power Pulse Width Modulator

文件：340.63 Kbytes 页数：9 Pages

TI

德州仪器