N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

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FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

文件：401.43 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：333.06 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.57 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：473.58 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

N 沟道逻辑电平 PowerTrench® MOSFET 30V，40A，18mΩ

此N沟道逻辑电平MOSFET已经过专门设计，采用同步或常规的开关PWM控制器提高DC/DC转换器的整体效率。 这些MOSFET与其他具有可比RDS(on)规格的MOSFET相比，具有更快的开关速度和更低的栅极电荷，从而产生整体效率更高的DC/DC电源设计。 •40 A，30 V\n•RDS(ON) = 0.018 Ω @ VGS = 10 V\n•RDS(ON) = 0.024 Ω @ VGS = 4.5 V\n•在高温下指定的临界DC电气参数。\n•耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。\n•高性能沟道技术可实现极低的RDS(ON).\n•175°C最大结温额定值。;

ONSEMI

安森美半导体

MOSFET N-CH 30V 48A TO-220

ONSEMI

安森美半导体