isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 168A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：332.18 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 60V, 168A, 4.0m廓

文件：592.2 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench® MOSFET 60V, 168A, 4.0mΩ

ONSEMI

安森美半导体

Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.33413 Mbytes 页数：11 Pages

INFINEON

英飞凌

isc N-Channel MOSFET Transistor

文件：337.98 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOSTM Power-Transistor

文件：501.39 Kbytes 页数：9 Pages

INFINEON

英飞凌