N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90m?

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching freque

文件：241.74 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=9A@ TC=25℃ ·Drain Source Voltage : VDSS=20V(Min) ·Static Drain-Source On-Resistance : RDS(on) =90mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：351.17 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：930.28 Kbytes 页数：4 Pages

BYCHIP

百域芯

N-Channel Logic Level UltraFET짰 Trench Power MOSFET 30V, 9A, 70m?

文件：267.08 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mΩ

ONSEMI

安森美半导体

N-Channel Logic Level UltraFET짰 Trench Power MOSFET 30V, 9A, 70m?

文件：267.08 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体