FDD6N20TF规格书应用电路批发采购Fairchild-114ic电子网

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FDD6N20TF	文件：371.47 Kbytes Page：9 Pages	N-Channel MOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6N20	文件：371.47 Kbytes Page：9 Pages	N-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6N20TM	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6N20TM	文件：371.47 Kbytes Page：9 Pages	N-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6N20TM	文件：330.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDU6N20	文件：371.47 Kbytes Page：9 Pages	N-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDU6N20TU	文件：371.47 Kbytes Page：9 Pages	N-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
MTD6N20E	文件：269.66 Kbytes Page：10 Pages	TMOSPOWERFET6.0AMPERES200VOLTSRDS(on)=0.7OHM TMOSE-FETPowerFieldEffectTransistorsDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery	MotorolaMotorola, Inc 摩托罗拉	Motorola
MTD6N20E	文件：90.4 Kbytes Page：9 Pages	PowerMOSFET6Amps,200VoltsN?묬hannelDPAK	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MTD6N20E	文件：345.86 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STS6N20	文件：96.47 Kbytes Page：7 Pages	SuperhighdensecelldesignforlowRDS(ON). STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN	Samhop 三合微科	Samhop
STS6N20	文件：519.64 Kbytes Page：9 Pages	N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI

详细参数

型号：
FDD6N20TF
功能描述：
MOSFET 200V N-CH MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	FDD6N20TF	FAIRCHILD	23+	TO-252(DPAK)	12300	全新原装真实库存含13点增值税票!	询价
深圳市高捷芯城科技有限公司	FDD6N20TF	onsemi(安森美)	23+	TO-252	9203	支持大陆交货,美金交易。原装现货库存。	询价
深圳市特顺芯科技有限公司	FDD6N20TF	FAIRCHILD	08+(pbfree)	TO-252(DPAK)	8866		询价
深圳市鹏和科技有限公司	FDD6N20TF	F	2022+	DPAK	5000	全现原装公司现货	询价
深圳市永贝尔科技有限公司	FDD6N20TF	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市百视威讯电子科技有限公司	FDD6N20TF		23+	N/A	64910	正品授权货源可靠	询价
深圳兆威电子有限公司	FDD6N20TF	VB	2019	DPAK	55000	绝对原装正品假一罚十!	询价
深圳市正迈科技有限公司	FDD6N20TF	FSC/ON	23+	原包装原封 □□	1496	原装进口特价供应 QQ 1304306553 更多详细咨询库存	询价
中天科工半导体（深圳）有限公司	FDD6N20TF	FAIRCHILD	20+	TO-252(DPAK)	36900	原装优势主营型号-可开原型号增税票	询价
深圳市汇莱威科技有限公司	FDD6N20TF	FAIRCHILD/仙童		TO-252(DPAK)	265209	假一罚十原包原标签常备现货!	询价

更多FDD6N20TF供应商更新时间2024-5-4 15:30:00

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