isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=20A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：329.69 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：99.04 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：99.04 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=20A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：329.25 Kbytes 页数：2 Pages

ISC

无锡固电

Swing door/Front plate, for enclosures

Remarks : 415x315x170

文件：47.56 Kbytes 页数：1 Pages

FIBOX

菲宝斯