3 AMP FAST RECOVERY BRIDGE RECTIFIERS

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DEC

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management. Features ■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V ■ Fast

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Fairchild

仙童半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -20A RDS(ON)

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Bychip

百域芯

P-Channel 1.8V Specified PowerTrench

Features ■ –6.7 A, –12 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V ■ Fast switching speed ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ DC/DC converter Genera

文件：756.98 Kbytes 页数：7 Pages

ONSEMI

安森美半导体