isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=44A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

N-Channel PowerTrench MOSFET

文件：270.98 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel PowerTrench MOSFET

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 100V, 44A, 28m廓

文件：506.55 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET 100V, 44A, 28m廓

文件：506.55 Kbytes 页数：11 Pages

Fairchild

仙童半导体

100 V、44 A、24 mΩ、D2PAKN 沟道 UltraFET® Trench

N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ, Fairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •rDS(ON) = 24mΩ（典型值），VGS = 10V，ID = 44A\n•Qg(tot) = 24nC（典型值），VGS = 10V\n•低密勒电荷\n•低 QRR体二极管\n•高频优化效率\n•UIS 能力（单脉冲和重复脉冲）\n•符合 AEC Q101\n•符合 RoHS 标准;

ONSEMI

安森美半导体