N-Channel PowerTrench MOSFET 100V, 32A, 36m?

Features • rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectur

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FAIRCHILD

仙童半导体

N-Channel PowerTrench MOSFET

Features ● rDS(ON) =32mΩ (Typ.), VGS = 10V, ID =32A ● Qg(tot) = 18.5nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

文件：53.44 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：322.12 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道 PowerTrench® MOSFET 100V，32A，36mΩ

ONSEMI

安森美半导体