N-Channel PowerTrench MOSFET 100V, 80A, 9m?

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distribute

文件：267.76 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel PowerTrench MOSFET

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distribute

文件：310.36 Kbytes 页数：11 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：356.17 Kbytes 页数：3 Pages

ISC

无锡固电

N-Channel PowerTrench MOSFET

Features ● rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A ● Qg(tot) = 84nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

文件：53.34 Kbytes 页数：2 Pages

KEXIN

科信电子

丝印：FDB3632；Package：TO-263AB；N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 • RoHS Compliant Applications • DC/DC converters and Off-Line UPS • Distribute

文件：1.37282 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

N 沟道，PowerTrench® MOSFET，100V，80A，9mΩ

N溝道PowerTrench® MOSFET 100V，80A，9mΩ，飛兆半導體最新的屏蔽柵極PowerTrench® MOSFET，結合了較小的Q SYNC和軟反向通過快速切換恢復固有的體二極管性能，可以大大提高同步整流的效率。 •RDS(ON) = 7.5mΩ（典型值） @ VGS = 10V, ID = 80A\n•QG(tot) = 84nC（典型值） @ VGS = 10V\n•低米勒电荷\n•低 QRR体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 100V, 80A, 9m廓

文件：489.88 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET 100V, 80A, 9m廓

文件：489.88 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N 沟道，PowerTrench® MOSFET，100V，80A，9mΩ

N-Channel PowerTrench® MOSFET, 100V, 80A, 9mΩ, Fairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •rDS(ON) = 7.5 mΩ（典型值）、VGS = 10 V、ID = 80 A\n•Qg(tot) = 84nC（典型值）且VGS = 10V\n•低密勒电荷\n•低 QRR体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合 AEC Q101\n•符合 RoHS 标准;

ONSEMI

安森美半导体