20V P-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • The DMP2065UQ is suitable for automotive appl

文件：327.4 Kbytes 页数：7 Pages

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3) • The DMP2065UQ is suitable for automotive appl

文件：327.4 Kbytes 页数：7 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • P-Channel MOSFET • Very Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • Green Device (Note 3) • Qualified to AEC-Q1

文件：311.11 Kbytes 页数：4 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Very Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance •

文件：231.54 Kbytes 页数：4 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Very Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance •

文件：231.54 Kbytes 页数：4 Pages

DIODES

美台半导体

P-Channel Enhancement Mode MOSFET

Application © Notebook © Load Switch © Networking © Hand-held Instruments

文件：1.87615 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMP2110UVTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q

文件：476.88 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AR7；Package：TSOT26；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMP2110UVTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q

文件：476.88 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：AR7；Package：TSOT26；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The DMP2110UVTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q

文件：476.88 Kbytes 页数：7 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low RDS(ON): • 72 mΩ @VGS = -4.5V • 108 mΩ @VGS = -2.7V • 123 mΩ @VGS = -2.5V • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • Green Device (Note 4)

文件：193.29 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

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