P-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 0.6mm Profile – Ideal for Low Profile Applications\nPCB Footprint of 4mm2\nLow Gate Threshold Voltage\nLow On-Resistance\nESD Protected up to 8kV;

Diodes

美台半导体

P-CHANNEL ENHANCEMENT MODE MOSFET

This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. •LD-MOS Technology with the Lowest Figure of Merit:\n•RDS(ON) = 5.7mΩ to Minimize On-State Losses\n•Qg = 9.5nC for Ultra-Fast Switching\n•VGS(TH) = -0.7V Typ. for a Low Turn-On Potential\n•CSP with Footprint 1.5mm x 1.5mm\n•Height = 0.34mm for Low Profile\n•ESD Protection of Gate;

Diodes

美台半导体

MOSFET

ARKmicro

开阳电子

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET P-CH 20V 700MA SC59-3

DIODES

美台半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET P-CH 20V TSOT26

DIODES

美台半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET P-CH 20V TSOT26

DIODES

美台半导体