DMP

5mm BOX POLYESTER

DMP2066UFDE-7

表面贴装型 P 通道 20 V 6.2A（Ta） 660mW（Ta） U-DFN2020-6（E 类）

类别:分立半导体产品|晶体管-FET，MOSFET-单FET，MOSFET RoHS状态：符合ROHS3规范

DMP1012USS

12V P-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits LowOn-Resistance LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance

DMP1012USS-13

Marking：P1012US；Package：SO-8；12V P-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits LowOn-Resistance LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance

DMP1096UCB4

P-CHANNEL ENHANCEMENT MODE MOSFET

Features LD-MOSTechnologywiththeLowestFigureofMerit: RDS(ON)=85mΩtoMinimizeOn-StateLosses Qg=3.7nCforUltra-FastSwitching VGS(TH)=-0.6VTyp.foraLowTurn-OnPotential CSPwithFootprint1.0mm×1.0mm Height=0.62mmforLowProfile ESD=3kVHBMProtectionofGate Tota

DMP1096UCB4-7

Marking：1W；Package：U-WLB1010-4；P-CHANNEL ENHANCEMENT MODE MOSFET

Features LD-MOSTechnologywiththeLowestFigureofMerit: RDS(ON)=85mΩtoMinimizeOn-StateLosses Qg=3.7nCforUltra-FastSwitching VGS(TH)=-0.6VTyp.foraLowTurn-OnPotential CSPwithFootprint1.0mm×1.0mm Height=0.62mmforLowProfile ESD=3kVHBMProtectionofGate Tota

DMP2004DWK

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualP-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltageVGS(TH)

DMP2004DWK-7

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualP-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltageVGS(TH)

DMP2004K

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •VeryLowGateThresholdVoltageVGS(TH)

DMP2004K-7

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •VeryLowGateThresholdVoltageVGS(TH)