5mm BOX POLYESTER

文件：281.08 Kbytes 页数：2 Pages

DUBILIER

表面贴装型 P 通道 20 V 6.2A（Ta） 660mW（Ta） U-DFN2020-6（E 类）

类别: 分立半导体产品 | 晶体管 - FET，MOSFET - 单 FET，MOSFET RoHS 状态： 符合 ROHS3 规范

文件：178.022 Kbytes 页数：5 Pages

DIODES

美台半导体

PDF上传者：深圳市富芯乐电子科技有限公司

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance

文件：375.4 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：P1012US；Package：SO-8；12V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance

文件：375.4 Kbytes 页数：7 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE MOSFET

Features LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 85mΩ to Minimize On-State Losses Qg = 3.7nC for Ultra-Fast Switching VGS(TH) = -0.6V Typ. for a Low Turn-On Potential CSP with Footprint 1.0mm × 1.0mm Height = 0.62mm for Low Profile ESD = 3kV HBM Protection of Gate Tota

文件：596.01 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：1W；Package：U-WLB1010-4；P-CHANNEL ENHANCEMENT MODE MOSFET

Features LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 85mΩ to Minimize On-State Losses Qg = 3.7nC for Ultra-Fast Switching VGS(TH) = -0.6V Typ. for a Low Turn-On Potential CSP with Footprint 1.0mm × 1.0mm Height = 0.62mm for Low Profile ESD = 3kV HBM Protection of Gate Tota

文件：596.01 Kbytes 页数：7 Pages

DIODES

美台半导体

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual P-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage VGS(TH)

文件：153.87 Kbytes 页数：5 Pages

DIODES

美台半导体

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual P-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage VGS(TH)

文件：153.87 Kbytes 页数：5 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage VGS(TH)

文件：147.86 Kbytes 页数：5 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage VGS(TH)

文件：147.86 Kbytes 页数：5 Pages

DIODES

美台半导体