| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: ◾ RDS(ON) 文件:145.1 Kbytes 页数:5 Pages | DIODES 美台半导体 | DIODES | ||
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: RDS(ON) 文件:164.69 Kbytes 页数:2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters 文件:1.03991 Mbytes 页数:9 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: ◾ RDS(ON) 文件:145.1 Kbytes 页数:5 Pages | DIODES 美台半导体 | DIODES | ||
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • L 文件:141.67 Kbytes 页数:5 Pages | DIODES 美台半导体 | DIODES | ||
P-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance: • Low Input Capacitance • Fast Switching Spee 文件:252.63 Kbytes 页数:2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
P-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance: • Low Input Capacitance • Fast Switching Spee 文件:252.63 Kbytes 页数:2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • L 文件:141.67 Kbytes 页数:5 Pages | DIODES 美台半导体 | DIODES | ||
P-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance: • Low Input Capacitance • Fast Switching Spee 文件:252.63 Kbytes 页数:2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual P-Channel MOSFET • Low On-Resistance • 150 mΩ @ VGS = -4.5V • 200 mΩ @ VGS = -2.5V • 240 mΩ @ VGS = -1.8V • Very Low Gate Threshold Voltage VGS(th) ≤ 1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant 文件:168.14 Kbytes 页数:5 Pages | DIODES 美台半导体 | DIODES |
技术参数
- Automotive Compliant PPAP:
No
- Polarity:
P
- ESD Diodes:
Yes
- VDS:
12 V
- VGS:
8 ±V
- IDS @ TA = +25°C:
12.8 A
- PD @ TA = +25°C:
2.1 W
- RDS(ON) Max @ VGS (10V):
N/A mΩ
- RDS(ON) Max @ VGS (4.5V):
8.5 mΩ
- RDS(ON) Max @ VGS (2.5V):
12 mΩ
- RDS(ON) Max @ VGS (1.8V):
18.5 mΩ
- VGS (th) Max:
1 V
- QG Typ @ VGS = 4.5V (nC):
28 nC
- QG Typ @ VGS = 10V (nC):
N/A nC
- Packages:
U-DFN2020-6 (Type F)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DISCRETE |
3000 |
DIO |
135000 |
询价 | |||
DIODES/美台 |
2022+ |
1600 |
全新原装 货期两周 |
询价 | |||
最新 |
2000 |
原装正品现货 |
询价 | ||||
NS |
23+ |
DIP |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
Diodes |
25+ |
54 |
公司优势库存 热卖中!! |
询价 | |||
DIODES/美台 |
17+ |
DFN |
3988 |
原装/现货 |
询价 | ||
DIODE |
23+ |
SOT-23 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
DUBILIER |
24+/25+ |
560 |
原装正品现货库存价优 |
询价 | |||
DIODES |
2018+ |
26976 |
代理原装现货/特价热卖! |
询价 | |||
DIODES |
24+ |
396 |
18 |
SOT-23 |
询价 |
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