P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage VGS(TH)

文件：147.86 Kbytes 页数：5 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：242.13 Kbytes 页数：6 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：405.01 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits • Low On-Resistance: RDS(on) = 550(max)mΩ @ VGS = 4.5V

文件：152.59 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：194.7 Kbytes 页数：6 Pages

DIODES

美台半导体