P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Very Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance •

文件：231.54 Kbytes 页数：4 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：238.22 Kbytes 页数：4 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Very Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance •

文件：231.54 Kbytes 页数：4 Pages

DIODES

美台半导体

P-Channel Enhancement Mode MOSFET

Application © Notebook © Load Switch © Networking © Hand-held Instruments

文件：1.87615 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：238.22 Kbytes 页数：4 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：428.66 Kbytes 页数：6 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：238.22 Kbytes 页数：4 Pages

DIODES

美台半导体