丝印：CSD19536KCS；Package：TO-220；CSD19536KCS 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-Free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 100V, 2.3mΩ, TO-220 NexFET™ powe

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TI

德州仪器

CSD19536KTT 100 V N-Channel NexFET Power MOSFET

文件：852.94 Kbytes 页数：14 Pages

TI

德州仪器

100V N-Channel NexFET Power MOSFET

文件：882.06 Kbytes 页数：14 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

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