丝印：CSD19503KCS；Package：TO-220；CSD19503KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 7.6mΩ, TO-220 NexFET™ power

文件：1.14742 Mbytes 页数：13 Pages

TI

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SURFACE MOUNT DRUM CORE INDUCTOR

文件：15.75 Kbytes 页数：1 Pages

RHOMBUS-IND

AUTOMOTIVE, 125째C OPERATION, 36 V INPUT, 400 mA, BUILT-IN WATCHDOG TIMER VOLTAGE REGULATOR WITH RESET FUNCTION

文件：787.41 Kbytes 页数：54 Pages

ABLIC

艾普凌科

80 V N-Channel NexFET Power MOSFETs

文件：768.68 Kbytes 页数：10 Pages

TI

德州仪器

80 V N-Channel NexFET??Power MOSFETs

文件：764.79 Kbytes 页数：10 Pages

TI

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：322.17 Kbytes 页数：2 Pages

ISC

无锡固电