| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：302；Package：DSBGA；CSD13302W 12 V N Channel NexFET™ Power MOSFET 1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is 文件：548.23 Kbytes 页数：11 Pages | TI 德州仪器 | TI | ||
丝印：13303；Package：DSBGA；N-Channel NexFET™ Power MOSFET 1FEATURES • Ultra Low on Resistance • Ultra Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package APPLICATIONS • Battery Management • Load Switch • Battery Protection DESCRIPTION The device has 文件：883.4 Kbytes 页数：10 Pages | TI 德州仪器 | TI | ||
丝印：13303；Package：DSBGA；N-Channel NexFET™ Power MOSFET 1FEATURES • Ultra Low on Resistance • Ultra Low Qg and Qgd • Small Footprint • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free • CSP 1 × 1.5 mm Wafer Level Package APPLICATIONS • Battery Management • Load Switch • Battery Protection DESCRIPTION The device has 文件：883.4 Kbytes 页数：10 Pages | TI 德州仪器 | TI | ||
丝印：13306；Package：DSBGA；CSD13306W 12 V N Channel NexFET™ Power MOSFET 1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de 文件：672.35 Kbytes 页数：11 Pages | TI 德州仪器 | TI | ||
丝印：13306；Package：DSBGA；CSD13306W 12 V N Channel NexFET™ Power MOSFET 1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de 文件：672.35 Kbytes 页数：11 Pages | TI 德州仪器 | TI | ||
丝印：13306；Package：DSBGA；CSD13306W 12 V N Channel NexFET™ Power MOSFET 1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de 文件：672.35 Kbytes 页数：11 Pages | TI 德州仪器 | TI | ||
丝印：13306；Package：DSBGA；CSD13306W 12 V N Channel NexFET™ Power MOSFET 1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de 文件：672.35 Kbytes 页数：11 Pages | TI 德州仪器 | TI | ||
CSD13383F4 12 V N-Channel FemtoFET™ MOSFET 1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized f 文件：935.46 Kbytes 页数：13 Pages | TI 德州仪器 | TI | ||
CSD13383F4 12 V N-Channel FemtoFET™ MOSFET 1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized f 文件：935.46 Kbytes 页数：13 Pages | TI 德州仪器 | TI | ||
CSD13383F4 12 V N-Channel FemtoFET™ MOSFET 1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized f 文件：935.46 Kbytes 页数：13 Pages | TI 德州仪器 | TI |
技术参数
- Configuration：
Single
- Rds(on) max at VGS=4.5 V (mOhms)：
5.5
- IDM - pulsed drain current (Max) (A)：
115
- QG typ (nC)：
6.5
- QGD typ (nC)：
1.2
- Package (mm)：
SON3x3
- VGS (V)：
10
- VGSTH typ (V)：
0.85
- ID - silicon limited at Tc=25degC (A)：
21
- ID - package limited (A)：
60
- Logic level：
Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
22+ |
SON8 |
93000 |
原装正品 |
询价 | ||
TI |
2450+ |
SON8 |
6541 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
TI |
2016+ |
SON8 |
10000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
TI |
24+ |
SON8 |
5630 |
TI一级代理原厂授权渠道实单支持 |
询价 | ||
TI/德州仪器 |
23+ |
SON8 |
18204 |
原装正品代理渠道价格优势 |
询价 | ||
TI/德州仪器 |
21+ |
VSON8 |
8026 |
原装正品 值得信赖 |
询价 | ||
TI |
20+ |
SON8 |
1837 |
全新原装公司现货
|
询价 | ||
TI/德州仪器 |
15+ |
SON8 |
1180 |
原装正品 可含税交易 |
询价 | ||
TI |
23+ |
(DQG)-8 |
30000 |
全新原装正品 |
询价 | ||
TI/德州仪器 |
2152+ |
SON-8 |
8000 |
原装正品现货假一罚十 |
询价 |
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