丝印：13306；Package：DSBGA；CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

文件：672.35 Kbytes 页数：11 Pages

TI

德州仪器

CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

文件：672.35 Kbytes 页数：11 Pages

TI

德州仪器

CSD13306W 12 V N Channel NexFET??Power MOSFET

文件：616.7 Kbytes 页数：12 Pages

TI

德州仪器

CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

文件：672.35 Kbytes 页数：11 Pages

TI

德州仪器