丝印：13306；Package：DSBGA；CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

文件：672.35 Kbytes 页数：11 Pages

TI

德州仪器

丝印：13306；Package：DSBGA；CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

文件：672.35 Kbytes 页数：11 Pages

TI

德州仪器

丝印：13306；Package：DSBGA；CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

文件：672.35 Kbytes 页数：11 Pages

TI

德州仪器

丝印：13306；Package：DSBGA；CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low on Resistance • Low Qg and Qgd • Small Footprint 1 × 1.5 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 8.8 mΩ, 12 V, N-Channel device is de

文件：672.35 Kbytes 页数：11 Pages

TI

德州仪器

AS-WORKBENCH-F 90 MA 230-G - Workbench

Mobile workbench, electrical height adjustment, modular extension with holder systems, device carriers, and shelves for automatic tools, printers, hand tools, and accessories, basis for the clipx WIRE assist and further workshop applications

文件：183.02 Kbytes 页数：4 Pages

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