CSD13383F4 12 V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized f

文件：935.46 Kbytes 页数：13 Pages

TI

德州仪器

CSD13383F4 12 V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized f

文件：935.46 Kbytes 页数：13 Pages

TI

德州仪器

N-Channel FemtoFET MOSFET

文件：764.53 Kbytes 页数：13 Pages

TI

德州仪器

CSD13383F4 12 V N-Channel FemtoFET™ MOSFET

1 Features • Low on-resistance • Ultra low Qg and Qgd • Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm • Low profile – 0.36 mm height • Integrated ESD protection diode – Rated >2 kV HBM – Rated >2 kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized f

文件：935.46 Kbytes 页数：13 Pages

TI

德州仪器